Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures

被引：61

作者：

Das, K

NandaGoswami, M

Mahapatra, R

Kar, GS

Dhar, A

Acharya, HN

Maikap, S

Lee, JH

Ray, SK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India

[2] Seoul Natl Univ, Sch Mat Sci & Engn, Ctr Microstruct Sci Mat, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 08期

关键词：

D O I：

10.1063/1.1646750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor capacitors with a trilayer structure consisting of the cap gate oxide, sputtered SiGe layers and thermally grown tunnel oxide were fabricated on p-Si substrates. The trilayer structures were rapid thermal annealed at 1000degreesC in nitrogen atmosphere for different durations. Cross-sectional transmission electron micrographs revealed the complete isolation of Ge nanocrystals in the sandwiched structure annealed for a longer duration. The optical and charge storage characteristics of trilayer structures were studied through photoluminescence spectroscopy and capacitance-voltage measurements, respectively. Under optimized annealing conditions, an enhancement of the charge storage capability of nanocrystals was observed in agreement with the optical emission characteristics. (C) 2004 American Institute of Physics.

引用

页码：1386 / 1388

页数：3

共 19 条

[1] Discharge mechanisms modeling in LPCVD silicon nanocrystals using C-V and capacitance transient techniques
Busseret, C
Souifi, A
Baron, T
Guillot, G
Martin, F
Semeria, MN
Gautier, J
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2000, 28 (5-6) : 493 - 500
[2] Raman characterization of germanium nanocrystals in amorphous silicon oxide films synthesized by rapid thermal annealing
Choi, WK
Ng, V
Ng, SP
Thio, HH
Shen, ZX
Li, WS
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1398 - 1403
[3] Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
Choi, WK
Chim, WK
Heng, CL
Teo, LW
Ho, V
Ng, V
Antoniadis, DA
Fitzgerald, EA
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (11) : 2014 - 2016
[4] Memory effects in MOS devices based on Si quantum dots
Crupi, I
Corso, D
Lombardo, S
Gerardi, C
Ammendola, G
Nicotra, G
Spinella, C
Rimini, E
Melanotte, M
[J]. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2003, 23 (1-2): : 33 - 36
[5] Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
Deleruyelle, D
Cluzel, J
De Salvo, B
Fraboulet, D
Mariolle, D
Buffet, N
Deleonibus, S
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1641 - 1644
[6] Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure
Heng, CL
Teo, LW
Ho, V
Tay, MS
Lei, Y
Choi, WK
Chim, WK
[J]. MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 218 - 223
[7] Electrical characterization of a trilayer germanium nanocrystal memory device
Ho, V
Tay, MS
Moey, CH
Teo, LW
Choi, WK
Chim, WK
Heng, CL
Lei, Y
[J]. MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 33 - 38
[8] Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance-voltage and conductance-voltage measurements
Huang, SY
Banerjee, S
Tung, RT
Oda, S
[J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 576 - 581
[9] Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy
Kanjilal, A
Hansen, JL
Gaiduk, P
Larsen, AN
Cherkashin, N
Claverie, A
Normand, P
Kapelanakis, E
Skarlatos, D
Tsoukalas, D
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1212 - 1214
[10] Rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals
Kim, JK
Cheong, HJ
Kim, Y
Yi, JY
Bark, HJ
Bang, SH
Cho, JH
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (15) : 2527 - 2529

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