Thermomigration induced degradation in solder alloys

被引:37
作者
Basaran, Cemal [1 ]
Li, Shidong [1 ]
Abdulhamid, Mohd F. [1 ]
机构
[1] SUNY Buffalo, Elect Packaging Lab, Buffalo, NY 14260 USA
关键词
D O I
10.1063/1.2943261
中图分类号
O59 [应用物理学];
学科分类号
摘要
Miniaturization of electronics to the nanoscale brings new challenges. Because of their small size and immense information and power processing capacity, large temperature gradients exist across nanoelectronics and power electronics solder joints. In this paper, a fully coupled thermomechanical-diffusion model is introduced to study the thermomigration induced strength degradation. A nonlinear viscoplastic material model with kinematic and isotropic hardening features is utilized. The model takes into account microstructural evolution of the material. A grain coarsening capability is built into the model to study its influence on thermomigration in solder alloys. The model is validated by comparing the simulation results with experimental data. (c) 2008 American Institute of Physics.
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页数:9
相关论文
共 45 条
[41]   ELECTROMIGRATION IN STRESSED THIN-FILMS [J].
TU, KN .
PHYSICAL REVIEW B, 1992, 45 (03) :1409-1413
[42]   Measurement of high electrical current density effects in solder joints [J].
Ye, H ;
Hopkins, DC ;
Basaran, C .
MICROELECTRONICS RELIABILITY, 2003, 43 (12) :2021-2029
[43]   Damage mechanics of microelectronics solder joints under high current densities [J].
Ye, H ;
Basaran, C ;
Hopkins, DC .
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2003, 40 (15) :4021-4032
[44]   Thermomigration in Pb-Sn solder joints under joule heating during electric current stressing [J].
Ye, H ;
Basaran, C ;
Hopkins, D .
APPLIED PHYSICS LETTERS, 2003, 82 (07) :1045-1047
[45]  
YE H, 2004, THESIS STATE U NEW Y