Scattering rates due to lineal dislocations in heterostructures for the Monte Carlo charge transport simulation

被引：4

作者：

Abou-Khalil, M

Matsui, T

Bougrioua, Z

Maciejko, R

Wu, K

Maciejko, R

Bougrioua, Z

机构：

[1] CRL, Koganei, Tokyo 184, Japan

[2] Ecole Polytech, POLY GRAMES, Dept GEGI, Electroopt Lab,Dept GP, Montreal, PQ H3C 3A7, Canada

[3] Univ Sci & Tech Lille Flandres Artois, CNRS URA 234, Lab Struct & Proprietes Etat Solide, F-59655 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.121726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We derived expressions for the scattering rates due to dislocations in pseudomorphic heterostructures. We gave explicit formulas for those scattering rates in the free and the confined states, depending on the initial carrier energy and on the component of the total wave vector parallel to the dislocations. We demonstrated that this new scattering process could affect the electron mean velocity by more than 30% from the ideal case treated commonly by the Monte Carlo simulators. (C) 1998 American Institute of Physics.

引用

页码：70 / 72

页数：3

共 9 条

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