Reliability of anodically bonded silicon-glass packages

被引:25
作者
Chen, MX [1 ]
Yi, XJ
Gan, ZY
Liu, S
机构
[1] Huazhong Univ Sci & Technol, Dept Optoelect Engn, Inst Microsyst, Wuhan 430074, Peoples R China
[2] Wayne State Univ, Dept Mech Engn, Detroit, MI 48202 USA
关键词
reliability; anodic bonding; wafer bonding; MEMS;
D O I
10.1016/j.sna.2004.11.031
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
in this paper, reliability of anodically bonded packages between silicon and borosilicate glass wafers has been investigated. The effects of certain accelerated environmental tests such as thermal cycling; thermal shock and boiling test on bonding quality are evaluated. The bonding strength is measured using an in-house tensile tester and fracture mainly occurs inside the glass wafer other than along the interface, indicating the robustness of the bond. The experiments conducted show that fast cooling after bonding results in high thermal stress in glass, which deteriorated the mechanical performances. Thermal cycling and thermal shock can help relax thermal stress, while boiling does do harm to bonding strength owing to their different effect on microstructures. Finally, the fracture interfaces are examined and analyzed by scanning electron microscopy (SEM). (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:291 / 295
页数:5
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