Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures

被引:15
作者
Murray, Conal E. [1 ]
Saenger, K. L. [1 ]
Kalenci, O. [2 ]
Polvino, S. M. [2 ]
Noyan, I. C. [2 ]
Lai, B. [3 ]
Cai, Z. [3 ]
机构
[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Columbia Univ, Dept Appl Phys & Math, New York, NY 10027 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
关键词
D O I
10.1063/1.2952044
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain distributions within a silicon-on-insulator (SOI) layer induced by overlying compressively stressed Si(3)N(4) features were measured using x-ray microbeam diffraction. A comparison of analytical and numerical mechanical models of the depth-averaged strain distributions to the measured strain profiles in the SOI layer indicated a blanket film stress of -2.5 GPa in the Si(3)N(4) features. A two-dimensional boundary element model, implemented to analyze thin film/substrate systems, reproduced the observed strain distributions better than an edge-force formulation due to the incorporation of loading along the Si(3)N(4)/Si interface. (c) 2008 American Institute of Physics.
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页数:8
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