A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators

被引：103

作者：

Otis, BP ^{[1
]}

Rabaey, JM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94704 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2003年 / 38卷 / 07期

关键词：

MEMS; phase noise; RF oscillators;

D O I：

10.1109/JSSC.2003.813219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18-mum CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to realize ultralow-power RF transceiver components. The oscillator achieves a phase-noise performance of -100 dBc/Hz at 10-kHz offset, -120 dBc/Hz at 100-kHz offset, and -140 dBc/Hz at 1-MHz offset. The startup time of the oscillator is less than 1 mus. The oscillator c ore consumes 300 muA from a 1-V supply.

引用

页码：1271 / 1274

页数：4

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