Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

被引:360
作者
Hirayama, H [1 ]
机构
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
关键词
D O I
10.1063/1.1899760
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to realize 250-350-nm-band high-efficiency deep ultraviolet (UV) emitting devices using group-III-nitride materials, it is necessary to obtain high-efficiency UV emission from wide-band-gap (In)AlGaN. The use of the In-segregation effect, which has already been used for InGaN blue emitting devices, is quite effective for achieving high-efficiency deep UV emission. We have demonstrated high-efficiency UV emission from quaternary InAlGaN-based quantum wells in the wavelength range between 290 and 375 nm at room temperature (RT) using the In-segregation effect. Emission fluctuations in the submicron region due to In segregation were clearly observed for quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated for a quaternary InAlGaN-based single quantum well at RT. Such high-efficiency UV emission can even be obtained on high threading-dislocation density buffer layers. A comparison of electroluminescence is made between light-emitting diodes (LEDs) with InAlGaN, AlGaN, and GaN active regions fabricated on SiC substrates with emission wavelengths between 340 and 360 nm. The emission intensity from the quaternary InAlGaN UV-LED was more than one order of magnitude higher than that from the AlGaN or GaN UV-LEDs under RT cw operation. We therefore fabricated 310-350-nm-band deep UV-LEDs with quaternary InAlGaN active regions. We achieved submilliwatt output power under RT pulsed operation for 308-314-nm LEDs. We also demonstrated a high output power of 7.4 mW from a 352-nm quaternary InAlGaN-based LED fabricated on a GaN substrate under RT cw operation. The maximum external quantum efficiency (EQE) of the 352-nm InAlGaN-based LED was higher than that obtained for an AlGaN-based LED with the same geometry. From these results, the advantages of the use of quaternary InAlGaN in 350-nm-band UV emitters were revealed. (C) 2005 American Institute of Physics.
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页数:19
相关论文
共 120 条
[1]   250 nm AlGaN light-emitting diodes [J].
Adivarahan, V ;
Sun, WH ;
Chitnis, A ;
Shatalov, M ;
Wu, S ;
Maruska, HP ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2004, 85 (12) :2175-2177
[2]   High-power deep ultraviolet light-emitting diodes based on a micro-pixel design [J].
Adivarahan, V ;
Wu, S ;
Sun, WH ;
Mandavilli, V ;
Shatalov, MS ;
Simin, G ;
Yang, JW ;
Maruska, HP ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2004, 85 (10) :1838-1840
[3]   High-efficiency 269 nm emission deep ultraviolet light-emitting diodes [J].
Adivarahan, V ;
Wu, S ;
Zhang, JP ;
Chitnis, A ;
Shatalov, M ;
Mandavilli, V ;
Gaska, R ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2004, 84 (23) :4762-4764
[4]   AlGaN single-quantum-well light-emitting diodes with emission at 285 nm [J].
Adivarahan, V ;
Wu, S ;
Chitnis, A ;
Pachipulusu, R ;
Mandavilli, V ;
Shatalov, M ;
Zhang, JP ;
Khan, MA ;
Tamulaitis, G ;
Sereika, A ;
Yilmaz, I ;
Shur, MS ;
Gaska, R .
APPLIED PHYSICS LETTERS, 2002, 81 (19) :3666-3668
[5]   Sub-milliwatt power III-N light emitting diodes at 285 nm [J].
Adivarahan, V ;
Zhang, JP ;
Chitnis, A ;
Shuai, W ;
Sun, J ;
Pachipulusu, R ;
Shatalov, M ;
Khan, MA .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B) :L435-L436
[6]   Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells [J].
Adivarahan, V ;
Chitnis, A ;
Zhang, JP ;
Shatalov, M ;
Yang, JW ;
Simin, G ;
Khan, MA ;
Gaska, R ;
Shur, MS .
APPLIED PHYSICS LETTERS, 2001, 79 (25) :4240-4242
[7]   INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J].
AKASAKI, I ;
HASHIMOTO, M .
SOLID STATE COMMUNICATIONS, 1967, 5 (11) :851-+
[8]  
Akasaki I, 1992, I PHYS C SER, V129, P851
[9]   Advantages of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes [J].
Akita, K ;
Nakamura, T ;
Hirayama, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (12) :8030-8031
[10]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114