Advantages of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes

被引：16

作者：

Akita, K

Nakamura, T

Hirayama, H

机构：

[1] Sumitomo Elect Ind Ltd, Semicond R&D Labs, Itami, Hyogo 6640016, Japan

[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 12期

关键词：

GaN substrate; ultraviolet; light-emitting diode; InAlGaN; quaternary; dislocation;

D O I：

10.1143/JJAP.43.8030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated InAlGaN quaternary ultraviolet (UV)-light-emitting diodes (LEDs) on GaN substrates with a low dislocation density and on GaN templates consisting of n-GaN on sapphire substrates, and compared the characteristics of these LEDs. A UV LED on a GaN substrate showed a considerably higher output power than that on a GaN template and no saturation even at an injection current of 500mA. Cathodeluminescence images indicated the advantages of using GaN substrates in InAlGaN UV LEDs.

引用

页码：8030 / 8031

页数：2

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