High-power UV-light-emitting diode on sapphire

被引：28

作者：

Iwaya, M

Takanami, S

Miyazaki, A

Watanabe, Y

Kamiyama, S

Amano, H

Akasaki, I

机构：

[1] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

dislocation density; UV-LED; light extraction efficiency; AlGaN; LT-AlN interlayer;

D O I：

10.1143/JJAP.42.400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a UV-light-emitting diode on low-dislocation-density AlGaN. This new UV-light-emitting diode shows a peak wavelength of 363 nm, a full-width at half maximum as narrow as 4.8 nm (similar to45 meV) and an output power of 3.2 mW at 100 mA DC current injection.

引用

页码：400 / 403

页数：4

共 23 条

[1] GROWTH AND LUMINESCENCE PROPERTIES OF MG-DOPED GAN PREPARED BY MOVPE [J].