Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells

被引：67

作者：

Hirayama, H

Enomoto, Y

Kinoshita, A

Hirata, A

Aoyagi, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] Waseda Univ, Dept Chem Engn, Shinjuku Ku, Tokyo 1698555, Japan

[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 09期

关键词：

D O I：

10.1063/1.1456951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated room-temperature (RT) intense ultraviolet (UV) emission with wavelength in the range of 300-340 nm from Inx1Aly1Ga1-x1-y1N/Inx2Aly2Ga1-x2-y2N multiple-quantum wells (MQWs) fabricated on SiC by metalorganic vapor phase epitaxy. We found that the UV emission is considerably enhanced upon introducing approximately 5% of In into AlGaN. Maximally efficient emission was obtained at 318 nm from the fabricated In0.05Al0.34Ga0.61N/In0.02Al0.60Ga0.38N three-layer MQW when the QW thickness was approximately 1.4 nm. The intensity of 320 nm band emission from the InAlGaN-based MQWs was as strong as that of 410 nm band emission from InGaN-based QWs at RT. We observed emission fluctuations of submicron size in cathode luminescence images of Inx1Aly1Ga1-x1-y1N/Inx2Aly2Ga1-x2-y2N single QW which might be due to In segregation effect. The temperature dependence of photoluminescence emission for InAlGaN-based QWs was greatly improved in comparison with that of GaN- or AlGaN-based QWs. (C) 2002 American Institute of Physics.

引用

页码：1589 / 1591

页数：3

共 18 条

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