Mn-doped V2VI3 semiconductors:: Single crystal growth and magnetic properties -: art. no. 10D324

被引：48

作者：

Choi, J

Lee, HW

Kim, BS

Choi, S

Choi, J

Song, JH

Cho, SL ^{[1
]}

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期

关键词：

D O I：

10.1063/1.1854451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown Mn-doped V2VI3 single crystals using the temperature gradient solidification method. We report on the structural and magnetic properties of Mn-doped Bi2Te3, Sb2Te3, Bi2Se3, and Sb2Se3 compound semiconductors. The lattice constants of several percent Mn-doped V2VI3 were slightly smaller than those of the undoped V2VI3 due to the smaller Mn atomic radius (1.40 angstrom) than those of Bi (1.60 angstrom) and Sb (1.45 angstrom). Mn-doped Bi2Te3 and Sb2Te3 had ferromagnetic ordering at T-C = 10 and 17 K, respectively. However, Mn-doped Bi2Se3 and Sb2Se3 showed spin glass and paramagnetic properties, respectively. (c) 2005 American Institute of Physics.

引用

页数：3

共 18 条

[1] Ferromagnetism in Mn-doped Ge [J].

Cho, SG ;

Choi, S ;

Hong, SC ;

Kim, Y ;

Ketterson, JB ;

Kim, BJ ;

Kim, YC ;

Jung, JH .

PHYSICAL REVIEW B, 2002, 66 (03) :333031-333033

[2] Room-temperature ferromagnetism in (Zn1-xMnx)GeP2 semiconductors -: art. no. 257203 [J].

Cho, SL ;

Choi, SY ;

Cha, GB ;

Hong, SC ;

Kim, Y ;

Zhao, YJ ;

Freeman, AJ ;

Ketterson, JB ;

Kim, BJ ;

Kim, YC ;

Choi, BC .

PHYSICAL REVIEW LETTERS, 2002, 88 (25) :4-257203

[3] Diluted magnetic semiconductors based on Sb2-xVxTe3 (0.01≤x≤0.03) -: art. no. 115212 [J].

Dyck, JS ;

Hájek, P ;

Losit'ák, P ;

Uher, C .

PHYSICAL REVIEW B, 2002, 65 (11) :1-7

[4] Carrier-induced ferromagnetism in p-Zn1-xMnxTe -: art. no. 085201 [J].

Ferrand, D ;

Cibert, J ;

Wasiela, A ;

Bourgognon, C ;

Tatarenko, S ;

Fishman, G ;

Andrearczyk, T ;

Jaroszynski, J ;

Kolesnik, S ;

Dietl, T ;

Barbara, B ;

Dufeu, D .

PHYSICAL REVIEW B, 2001, 63 (08)

[5] CRITICAL-BEHAVIOR IN THE ISING ANTIFERROMAGNET MNTE2 [J].

HASTINGS, JM ;

CORLISS, LM ;

KUNNMANN, W ;

MUKAMEL, D .

PHYSICAL REVIEW B, 1986, 33 (09) :6326-6330

[6] Ferromagnetism in new diluted magnetic semiconductor Bi2-xFexTe3 [J].

Kulbachinskii, VA ;

Kaminskii, AY ;

Kindo, K ;

Narumi, Y ;

Suga, K ;

Lostak, P ;

Svanda, P .

PHYSICA B-CONDENSED MATTER, 2002, 311 (3-4) :292-297

[7] Enhancement of magnetic coercivity and ferromagnetic transition temperature by proximity effects in the GaMnAs-ZnMnSe multilayer system [J].

Liu, X ;

Sasaki, Y ;

Furdyna, JK .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2414-2416

[8] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[9] Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy [J].

Overberg, ME ;

Gila, BP ;

Abernathy, CR ;

Pearton, SJ ;

Theodoropoulou, NA ;

McCarthy, KT ;

Arnason, SB ;

Hebard, AF .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3128-3130

[10] A group-IV ferromagnetic semiconductor:: MnxGe1-x [J].

Park, YD ;

Hanbicki, AT ;

Erwin, SC ;

Hellberg, CS ;

Sullivan, JM ;

Mattson, JE ;

Ambrose, TF ;

Wilson, A ;

Spanos, G ;

Jonker, BT .

SCIENCE, 2002, 295 (5555) :651-654

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