Breakdown in millimeter-wave power InP HEMTs: a comparison with PHEMTs

被引：2

作者：

del Alamo, JA ^{[1
]}

Somerville, MH ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In spite of their superior transport characteristics, InP HEMTs deliver lower output power than GaAs PHEMTs in the millimeter-wave regime. However, the superior power-added efficiency of InP HEMTs when compared with PHEMTs, makes this technology attractive for many applications. The reason for the lower power output of InP HEMTs is their relatively small off- and on-state breakdown voltage. This talk reviews the state of knowledge regarding the physics of BV in InP HEMTs placing it in contrast with PHEMTs. It also discusses strategies for improving BV and the power output of InP HEMTs.

引用

页码：7 / 10

页数：4

共 10 条

[1] A NEW DRAIN-CURRENT INJECTION TECHNIQUE FOR THE MEASUREMENT OF OFF-STATE BREAKDOWN VOLTAGE IN FETS [J].

BAHL, SR ;

DELALAMO, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) :1558-1560

[2]

BALLEGEER DG, 1994, INT C INP REL MAT, P331

[3]

Hur KY, 1995, GAAS IC SYMPOSIUM TECHNICAL DIGEST 1995 - 17TH ANNUAL, P101, DOI 10.1109/GAAS.1995.528971

[4]

MENGEHESSO G, 1996, INT EL DEV M, P43

[5]

PUTNAM CS, 1997, INT C INP REL MAT, P197

[6]

ROHDIN H, 1997, INT C INP REL MAT, P357

[7]

ROHDIN M, 1998, COMMUNICATION

[8] A model for tunneling-limited breakdown in high-power HEMTs [J].

Somerville, MH ;

delAlamo, JA .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :35-38

[9] On-state breakdown in power HEMTs: Measurements and modeling [J].

Somerville, MH ;

Blanchard, R ;

del Alamo, JA ;

Duh, G ;

Chao, PC .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :553-556

[10] BODY CONTACTS IN INP-BASED INALAS/INGAAS HEMTS AND THEIR EFFECTS ON BREAKDOWN VOLTAGE AND KINK SUPPRESSION [J].

SUEMITSU, T ;

ENOKI, T ;

ISHII, Y .

ELECTRONICS LETTERS, 1995, 31 (09) :758-759

← 1 →