BODY CONTACTS IN INP-BASED INALAS/INGAAS HEMTS AND THEIR EFFECTS ON BREAKDOWN VOLTAGE AND KINK SUPPRESSION

被引:18
作者
SUEMITSU, T
ENOKI, T
ISHII, Y
机构
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa-Pref, 243-01, 3-1, Morinosato Wakamiya
关键词
HIGH ELECTRON MOBILITY TRANSISTORS; OHMIC CONTACTS;
D O I
10.1049/el:19950496
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors investigate the effects of body contacts in InP-based In0.52Al0.48As/In0.53Ga0.47As, HEMTs. A body contact connecting a floating InAlAs buffer to an ohmic electrode is formed by a buried p-layer and the Zn-diffused p(+)-region in the electrode. The body contact successfully prevents holes generated by impact ionisation from accumulating in the channel, resulting in higher breakdown voltage and kink-free I/V characteristics.
引用
收藏
页码:758 / 759
页数:2
相关论文
共 8 条
[1]   0.05-MU-M-GATE INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR AND REDUCTION OF ITS SHORT-CHANNEL EFFECTS [J].
ENOKI, T ;
TOMIZAWA, M ;
UMEDA, Y ;
ISHII, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :798-803
[2]  
ENOKI T, 1994, 1994 IEEE GAAS IC S, P337
[3]   KINK EFFECT IN SUBMICROMETER-GATE MBE-GROWN INALAS/INGAAS/INALAS HETEROJUNCTION MESFETS [J].
KUANG, JB ;
TASKER, PJ ;
WANG, GW ;
CHEN, YK ;
EASTMAN, LF ;
AINA, OA ;
HIER, H ;
FATHIMULLA, A .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :630-632
[4]   IMPACT IONIZATION IN INALAS/INGAAS HFETS [J].
MOOLJI, AA ;
BAHL, SR ;
DELALAMO, JA .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) :313-315
[5]   50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J].
NGUYEN, LD ;
BROWN, AS ;
THOMPSON, MA ;
JELLOIAN, LM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2007-2014
[6]   SIMPLIFIED ANALYSIS OF BODY CONTACT EFFECT FOR MOSFET SOI [J].
OMURA, Y ;
IZUMI, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1391-1393
[7]   A NOVEL BODY CONTACT FOR SIMOX BASED SOI MOSFETS [J].
PATEL, M ;
RATNAM, P ;
SALAMA, CAT .
SOLID-STATE ELECTRONICS, 1991, 34 (10) :1071-1075
[8]   PROPERTIES OF ESFI MOS-TRANSISTORS DUE TO FLOATING SUBSTRATE AND FINITE VOLUME [J].
TIHANYI, J ;
SCHLOTTERER, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1017-1023