A NOVEL BODY CONTACT FOR SIMOX BASED SOI MOSFETS

This paper presents a novel SIMOX/SOI device structure with a bottom body contact to the substrate to reduce floating body effects. This structure retains the density and dielectric isolation advantages of SOI. Experimental d.c. and transient measurements done on SOI devices with body contact and standard SOI devices fabricated on the same wafer show the effectiveness of the body contact in eliminating: (a) the kink in I-V characteristics; (b) the hysteresis/latch-up effects; and (c) the transient overshoot in the drain current.