PATTERNED IMPLANTED BURIED-OXIDE TRANSISTOR STRUCTURES

被引：3

作者：

KAMINS, TI

MARCOUX, PJ

MOLL, JL

ROYLANCE, LM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：423 / 426

页数：4

共 7 条

[1] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

BROADBENT, EK ;

RAMILLER, CL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) :1427-1433

[2]

HASHIMOTO K, 1985, 1985 INT EL DEV M WA, P672

[3] NUMERICAL-ANALYSIS OF SWITCHING CHARACTERISTICS IN SOI MOSFETS [J].

KATO, K ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :133-139

[4] ANALYSIS OF KINK CHARACTERISTICS IN SILICON-ON-INSULATOR MOSFETS USING 2-CARRIER MODELING [J].

KATO, K ;

WADA, T ;

TANIGUCHI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :458-462

[5]

LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[6] THE TOP SILICON LAYER OF SOI FORMED BY OXYGEN ION-IMPLANTATION [J].

PINIZZOTTO, RF ;

VAANDRAGER, BL ;

MATTESON, S ;

LAM, HW ;

MALHI, SDS ;

HAMDI, AH ;

MCDANIEL, FD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) :1718-1721

[7] CHARACTERIZATION OF BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION OF OXYGEN [J].

WILSON, SR ;

FATHY, D .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :127-146

← 1 →