CHARACTERIZATION OF BURIED SIO2 LAYERS FORMED BY ION-IMPLANTATION OF OXYGEN

被引：20

作者：

WILSON, SR ^{[1
]}

FATHY, D ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85281

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 01期

关键词：

D O I：

10.1007/BF02659840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：127 / 146

页数：20

共 22 条

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[9] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION [J].

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