THERMAL ANNEALING BEHAVIOR OF AN OXIDE LAYER UNDER SILICON

被引：14

作者：

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

PINIZZOTTO, RF ^{[1
]}

MATTESON, S ^{[1
]}

LAM, HW ^{[1
]}

MALHI, SDS ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 12期

关键词：

D O I：

10.1063/1.93413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1143 / 1145

页数：3

共 10 条

[1]

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[2]

HAMDI AH, UNPUB

[3] EFFECTS OF AMBIENTS ON OXYGEN PRECIPITATION IN SILICON [J].

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[4] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

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ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[5]

LAM HW, 1982, VLSI ELECTRONICS MIC, V4, pCH1

[6]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[7] SURFACE SILICON CRYSTALLINITY AND ANOMALOUS COMPOSITION PROFILES OF BURIED SIO2 AND SI3N4 LAYERS FABRICATED BY OXYGEN AND NITROGEN IMPLANTATION IN SILICON [J].

MAEYAMA, S ;

KAJIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :744-751

[8] A HIGH-SPEED BURIED CHANNEL MOSFET ISOLATED BY AN IMPLANTED SILICON DIOXIDE LAYER [J].

OHWADA, K ;

OMURA, Y ;

SANO, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1084-1087

[9]

PINIZZOTTO RF, 1982, P MATER RES SOC, V7, P401

[10]

SCHAAKE HF, 1981, ELECTROCHEM SOC, V81, P273

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