Analytical model for the temperature dependence of the spectral responsivity of silicon

被引：22

作者：

Hartmann, J ^{[1
]}

Fischer, J ^{[1
]}

Johannsen, U ^{[1
]}

Werner, L ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2001年 / 18卷 / 07期

关键词：

D O I：

10.1364/JOSAB.18.000942

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An analytical theory based on a model of the internal quantum efficiency of the silicon photodiode and the temperature dependence of the absorption coefficient of silicon is developed to predict the temperature dependence of the spectral responsivity in the wavelength range from 400 to 1020 nm near room temperature. The influence of the various parameters of the model on the temperature coefficient is investigated theoretically. Comparison of measurements and prediction shows good agreement. The developed model permits: further improvement of accuracy in spectral-responsivity scales based on silicon photodiodes, especially in the near-infrared wavelength region. (C) 2001 Optical Society of America.

引用

页码：942 / 947

页数：6

共 16 条

[1] AN UPDATED EDLEN EQUATION FOR THE REFRACTIVE-INDEX OF AIR [J].