Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

被引：718

作者：

Ryu, Sunmin ^{[3
]}

Liu, Li ^{[1
]}

Berciaud, Stephane ^{[1
]}

Yu, Young-Jun ^{[2
]}

Liu, Haitao ^{[1
]}

Kim, Philip ^{[2
]}

Flynn, George W. ^{[1
]}

Brus, Louis E. ^{[1
]}

机构：

[1] Columbia Univ, Dept Chem, New York, NY 10027 USA

[2] Columbia Univ, Dept Phys, New York, NY 10027 USA

[3] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

来源：

NANO LETTERS | 2010年 / 10卷 / 12期

基金：

美国国家科学基金会;

关键词：

Graphene; Raman spectroscopy scanning tunneling microscopy (STM) chemical doping ripple oxygen; FIELD-EFFECT TRANSISTORS; CARBON NANOTUBES; SUSPENDED GRAPHENE; RAMAN-SPECTROSCOPY; MOLECULAR-OXYGEN; REDOX COUPLE; SURFACE; FILMS; GRAPHITE; SHEETS;

D O I：

10.1021/nl1029607

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Using micro Raman spectroscopy and scanning tunneling microscopy we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate The observed upshift of the Raman G band represents charge doping and not compressive strain Two independent factors control the doping (1) the degree of graphene coupling to the substrate and (2) exposure to oxygen and moisture Thermal annealing induces a pronounced structural distortion due to close coupling to SiO2 and activates the ability of diatomic oxygen to accept charge from graphene Gas flow experiments show that dry oxygen reversibly dopes graphene doping becomes stronger and more irreversible in the presence of moisture and over long periods of. time We propose that oxygen molecular anions are stabilized by water solvation and electrostatic binding to the silicon dioxide surface

引用

页码：4944 / 4951

页数：8

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