ZnO thin film transistor immunosensor with high sensitivity and selectivity

被引:65
作者
Reyes, Pavel Ivanoff [1 ]
Ku, Chieh-Jen [1 ]
Duan, Ziqing [1 ]
Lu, Yicheng [1 ]
Solanki, Aniruddh [2 ]
Lee, Ki-Bum [2 ]
机构
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
[2] Rutgers State Univ, Dept Chem & Chem Biol, Piscataway, NJ 08854 USA
基金
美国国家科学基金会;
关键词
DEVICE;
D O I
10.1063/1.3582555
中图分类号
O59 [应用物理学];
学科分类号
摘要
A zinc oxide thin film transistor-based immunosensor (ZnO-bioTFT) is presented. The back-gate TFT has an on-off ratio of 108 and a threshold voltage of 4.25 V. The ZnO channel surface is biofunctionalized with primary monoclonal antibodies that selectively bind with epidermal growth factor receptor (EGFR). Detection of the antibody-antigen reaction is achieved through channel carrier modulation via pseudo double-gating field effect caused by the biochemical reaction. The sensitivity of 10 fM detection of pure EGFR proteins is achieved. The ZnO-bioTFT immunosensor also enables selectively detecting 10 fM of EGFR in a 5 mg/ml goat serum solution containing various other proteins. (C) 2011 American Institute of Physics. [doi:10.1063/1.3582555]
引用
收藏
页数:3
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