Polysilicon TFT on plastics

被引：7

作者：

Shimoda, T ^{[1
]}

Inoue, S ^{[1
]}

Utsunomiya, S ^{[1
]}

机构：

[1] Seiko Epson Corp, Base Technol Res Ctr, Nagano 3990293, Japan

来源：

FLAT PANEL DISPLAY TECHNOLOGY AND DISPLAY METROLOGY II | 2001年 / 4295卷

关键词：

plastic substrate; poly-Si TFTs; transfer process; SUFTLA (R); LCD;

D O I：

10.1117/12.424888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technology that makes it possible to transfer thin film devices from an original substrate to the other one by using laser ablation/annealing has been developed. This technology is named SUFTLA (R) which stands for surface free technology by laser ablation/annealing. In the process of this technology, polycrystalline-silicon thin film transistors (poly-Si TFTs) and TFT circuits, which are firstly fabricated by the low-temperature process below 425 degreesC on quartz or glass substrates, are transferred onto plastic substrates. Any degradation during the transfer process are not observed. By using this technology, CMOS ring oscillators and a TFT array with integrated drivers for LCD have been developed on plastic substrates and their complete operations were confirmed. This technology is not only applied for displays such as LCD and OELD, but also to any kinds of TFT circuits including memories and logics on plastics. It also enable us to fabricate a three dimensional ICs with a very simple manner.

引用

页码：52 / 59

页数：8

共 12 条

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