Erbium impurity atoms in silicon

被引：20

作者：

Masterov, VF ^{[1
]}

Nasredinov, FS ^{[1
]}

Seregin, PP ^{[1
]}

Terukov, EI ^{[1
]}

Mezdrogina, MM ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1187454

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown using Er-169(Tm-169) Mossbauer emission spectroscopy that the photoluminescent centers in crystalline erbium-doped silicon are [Er-O] clusters and that the local symmetry of the Er3+ ions in these clusters is similar to that in Er2O3. The photoluminescent centres in amorphous hydrogenated erbium-doped silicon are clusters, whose local structure also corresponds to erbium oxide. (C) 1998 American Institute of Physics.(()

引用

页码：636 / 639

页数：4

共 9 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

BRESLER, MS ;

GUSEV, OB ;

KUDOYAROVA, VK ;

KUZNETSOV, AN ;

PAK, PE ;

TERUKOV, EI ;

YASSIEVICH, IN ;

ZAKHARCHENYA, BP ;

FUHS, W ;

STURN, A .

APPLIED PHYSICS LETTERS, 1995, 67 (24) :3599-3601

[3] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[4] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[5]

Masterov V. F., 1996, Technical Physics Letters, V22, P960

[6] The possible mechanism of excitation of the f-f emission from Er-O clusters in silicon [J].

Masterov, VF ;

Gerchikov, LG .

RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 :227-238

[7] ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS [J].

POLMAN, A ;

VANDENHOVEN, GN ;

CUSTER, JS ;

SHIN, JH ;

SERNA, R ;

ALKEMADE, PFA .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) :1256-1262

[8] Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si [J].

Terrasi, A ;

Franzo, G ;

Coffa, S ;

Priolo, F ;

DAcapito, F ;

Mobilio, S .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1712-1714

[9]

Terukov EI, 1996, SEMICONDUCTORS+, V30, P440

← 1 →