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Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes

被引：36
作者：
Tsai, YY
Lin, KW
Lu, CT
Chen, HI
Chuang, HM
Chen, CY
Cheng, CC
Liu, WC
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan
[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期
关键词：
Barrier height; Fermi-level pinning; hydrogen sensors; Schottky diode;
D O I：
10.1109/TED.2003.819656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H-2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height an higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.
引用
收藏
页码：2532 / 2539
页数：8
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