Comparison between the energies of ejected ions in the cases of KrF laser ablation and Ar ion sputtering

被引:7
作者
Ohwaki, T [1 ]
Akihama, K [1 ]
Taga, Y [1 ]
Takayanagi, N [1 ]
Taki, M [1 ]
机构
[1] TOYOTA MOTOR CORP, TOYOTA, AICHI 471, JAPAN
关键词
laser ablation; ion sputtering; ejected ion; mass spectrum; kinetic energy;
D O I
10.1016/S0169-4332(96)00818-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetic energy distributions of positive ions ejected from Si, Co, Ni and Pb-Zr-Ti-O targets subjected to KrF excimer laser or Ar ion irradiation were measured. It was found that the average energies of the ejected ions originating from laser ablation were in excess of 100 eV, while those from Ar ion sputtering were a few tens of eV. The energy distributions of the ejected ions by laser ablation were peculiar ones, characterized by having a lot of peaks, which are thought to show the plasma states on the target surface, for example generation of high electrical field. On the other hand, the energy distributions in the case of Ar ion sputtering showed the ones based on the collision cascade process.
引用
收藏
页码:773 / 776
页数:4
相关论文
共 27 条
[1]  
Benninghoven A., 1987, SECONDARY ION MASS S
[2]   TIME-OF-FLIGHT ANALYSIS OF THE PLUME DYNAMICS OF LASER-ABLATED 6H-SILICON CARBIDE [J].
CAPANO, MA .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4790-4792
[3]   PULSED LASER DEPOSITION HISTORY AND LASER-TARGET INTERACTIONS [J].
CHEUNG, J ;
HORWITZ, J .
MRS BULLETIN, 1992, 17 (02) :30-36
[4]  
Chrisey D. B., 1994, PULSED LASER DEPOSIT
[5]   EXCIMER LASER ABLATION OF A YBA2CU3O7-DELTA TARGET IN A VACUUM - CHARACTERIZATION OF THE MASS AND ENERGY OF EJECTED MATERIAL [J].
CHRISEY, DB ;
HORWITZ, JS ;
LEUCHTNER, RE .
THIN SOLID FILMS, 1991, 206 (1-2) :111-115
[6]   VELOCITY DISTRIBUTIONS OF IONS IN THE ABLATION PLUME OF A Y1BA2CU3OX TARGET [J].
FUKUSHIMA, K ;
KANKE, Y ;
BADAYE, M ;
MORISHITA, T .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) :5406-5410
[7]  
GEOHEGAN DB, 1990, MATER RES SOC SYMP P, V191, P211, DOI 10.1557/PROC-191-211
[8]   LASER-INDUCED DEPOSITION OF SILICON FILMS [J].
HANABUSA, M ;
MORIYAMA, S ;
KIKUCHI, H .
THIN SOLID FILMS, 1983, 107 (03) :227-234
[9]  
ITOH T, 1989, BEAM MODIFICATION MA, V3
[10]   PYROELECTRIC PROPERTY OF PB5GE3O11 THIN-FILMS PREPARED BY LASER-ABLATION [J].
KAGEYAMA, Y ;
SAKATA, J ;
TAGA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5158-5162