Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin films

被引：170

作者：

Paruch, P ^{[1
]}

Tybell, T ^{[1
]}

Triscone, JM ^{[1
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva 4, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 04期

关键词：

D O I：

10.1063/1.1388024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that atomic force microscopy can be used to precisely manipulate individual sub-50 nm ferroelectric domains in ultrahigh density arrays on high-quality epitaxial Pb(Zr0.2Ti0.8)O-3 thin films. Control of domain size was achieved by varying the strength and duration of the voltage pulses used to polarize the material. Domain size was found to depend logarithmically upon the writing time and linearly upon the writing voltage. All domains, including those written with similar to 100 ns pulses, remained completely stable for the 7 day duration of the experiment. (C) 2001 American Institute of Physics.

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页码：530 / 532

页数：3

相关论文

共 16 条

[1] Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures [J].

Ahn, CH ;

Tybell, T ;

Antognazza, L ;

Char, K ;

Hammond, RH ;

Beasley, MR ;

Fischer, O ;

Triscone, JM .

SCIENCE, 1997, 276 (5315) :1100-1103

[2] Terabit-per-square-inch data storage with the atomic force microscope [J].

Cooper, EB ;

Manalis, SR ;

Fang, H ;

Dai, H ;

Matsumoto, K ;

Minne, SC ;

Hunt, T ;

Quate, CF .

APPLIED PHYSICS LETTERS, 1999, 75 (22) :3566-3568

[3] Ferroelectric domain characterisation and manipulation:: a challenge for scanning probe microscopy [J].

Eng, LM ;

Bammerlin, M ;

Loppacher, C ;

Guggisberg, M ;

Bennewitz, R ;

Lüthi, R ;

Meyer, E ;

Huser, T ;

Heinzelmann, H ;

Güntherodt, HJ .

FERROELECTRICS, 1999, 222 (1-4) :153-162

[4] Scaling of ferroelectric properties in thin films [J].

Ganpule, CS ;

Stanishevsky, A ;

Su, Q ;

Aggarwal, S ;

Melngailis, J ;

Williams, E ;

Ramesh, R .

APPLIED PHYSICS LETTERS, 1999, 75 (03) :409-411

[5] Nanoscale imaging of domain dynamics and retention in ferroelectric thin films [J].

Gruverman, A ;

Tokumoto, H ;

Prakash, AS ;

Aggarwal, S ;

Yang, B ;

Wuttig, M ;

Ramesh, R ;

Auciello, O ;

Venkatesan, T .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3492-3494

[6] Characteristics of PZT thin films as ultra-high density recording media [J].

Hidaka, T ;

Maruyama, T ;

Sakai, I ;

Saitoh, M ;

Wills, LA ;

Hiskes, R ;

Dicarolis, SA ;

Amano, J ;

Foster, CM .

INTEGRATED FERROELECTRICS, 1997, 17 (1-4) :319-327

[7]

Hidaka T, 1996, APPL PHYS LETT, V68, P2358, DOI 10.1063/1.115857

[8] Sequential position readout from arrays of micromechanical cantilever sensors [J].

Lang, HP ;

Berger, R ;

Andreoli, C ;

Brugger, J ;

Despont, M ;

Vettiger, P ;

Gerber, C ;

Gimzewski, JK ;

Ramseyer, JP ;

Meyer, E ;

Guntherodt, HJ .

APPLIED PHYSICS LETTERS, 1998, 72 (03) :383-385

[9] Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties [J].

Lin, A ;

Hong, X ;

Wood, V ;

Verevkin, AA ;

Ahn, CH ;

McKee, RA ;

Walker, FJ ;

Specht, ED .

APPLIED PHYSICS LETTERS, 2001, 78 (14) :2034-2036

[10] THERMOMECHANICAL WRITING WITH AN ATOMIC FORCE MICROSCOPE TIP [J].

MAMIN, HJ ;

RUGAR, D .

APPLIED PHYSICS LETTERS, 1992, 61 (08) :1003-1005