InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region

被引：18

作者：

Chen, ZH

Baklenov, O

Kim, ET

Mukhametzhanov, I

Tie, J

Madhukar, A

Ye, Z

Campbell, JC

机构：

[1] Univ So Calif, Dept Mat Sci, Photon Mat & Devices Lab, VHE 506, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Phys, Photon Mat & Devices Lab, VHE 506, Los Angeles, CA 90089 USA

[3] Univ Texas, Dept Elect Engn, Ctr Microelect Res, Austin, TX 78712 USA

来源：

INFRARED PHYSICS & TECHNOLOGY | 2001年 / 42卷 / 3-5期

关键词：

quantum dot; infrared photodetector; intraband transition; indium arsenide; galium arsenide; photocurrent;

D O I：

10.1016/S1350-4495(01)00109-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report on a study of n-type quantum dot (QD) infrared photodetectors (QDIPs) based on InAs/GaAs QDs grown via an innovative technique called punctuated island growth. The electronic structure of the QDs inserted in QDIP devices is comprehensively investigated with photoluminescence, and intra- and interband photocurrent spectroscopy. The influence of AlGaAs layers inserted in active regions on the performance of the QDIPs is examined. Bias and temperature dependence of intraband photoresponse of QDIPs with undoped active region is examined. Initial results on intraband photoresponsivity and detectivity of these QDIPs at 77 K are reported. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：479 / 484

页数：6

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