Experimental method for the determination of the energy distribution of stress-induced oxide traps

被引:23
作者
Spinelli, AS [1 ]
Lacaita, AL
Rigamonti, M
Ghidini, G
机构
[1] Univ Insubria, Dipartimento Sci Chim Fis & Matemat, I-22100 Como, Italy
[2] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy
[3] ST Microelect, I-20041 Agrate Brianza, Italy
关键词
D O I
10.1109/55.748903
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An experimental procedure for the determination of the energy distribution of oxide neutral traps is presented, showing the evolution of the stress-induced damage as a function of Fowler-Nordheim stress fluence and field. It is shown that the traps are mainly distributed around 2 eV from the oxide conduction band. Results are presented for different oxide technologies, investigating the effect of oxide nitridation and growth conditions on the trap energy distribution.
引用
收藏
页码:106 / 108
页数:3
相关论文
共 16 条
[1]   Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current [J].
Arakawa, T ;
Matsumoto, R .
APPLIED SURFACE SCIENCE, 1997, 113 :605-609
[2]   A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides [J].
Degraeve, R ;
DeBlauwe, J ;
Ogier, JL ;
Roussel, P ;
Groeseneken, G ;
Maes, HE .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :327-330
[3]   TRAPPING AND TRAP CREATION STUDIES ON NITRIDED AND REOXIDIZED-NITRIDED SILICON DIOXIDE FILMS ON SILICON [J].
DIMARIA, DJ ;
STATHIS, JH .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1500-1509
[4]   MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS [J].
DIMARIA, DJ ;
CARTIER, E .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3883-3894
[5]   CORRELATION OF STRESS-INDUCED LEAKAGE CURRENT IN THIN OXIDES WITH TRAP GENERATION INSIDE THE OXIDES [J].
DUMIN, DJ ;
MADDUX, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :986-993
[6]  
Lin YH, 1997, IEEE T ELECTRON DEV, V44, P1441
[7]   TUNNELING TO TRAPS IN INSULATORS [J].
LUNDSTROM, I ;
SVENSSON, C .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5045-5047
[8]  
Manzini S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P112
[9]   BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING [J].
MASERJIAN, J ;
ZAMANI, N .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :559-567
[10]  
Moazzami R., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P139, DOI 10.1109/IEDM.1992.307327