Preparation and characterization of highly (112)-oriented CuInS2 films deposited by a one-stage RF reactive sputtering process

被引:38
作者
He, YB [1 ]
Krämer, T [1 ]
Polity, A [1 ]
Gregor, R [1 ]
Kriegseis, W [1 ]
Österreicher, I [1 ]
Hasselkamp, D [1 ]
Meyer, BK [1 ]
机构
[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
关键词
CuInS2; thin film; one-stage RF sputtering; photovoltaic;
D O I
10.1016/S0040-6090(03)00164-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With a fixed radio frequency power of 200 W and H2S flow in the range of 20-30 sccm, high quality CuInS2 films with good adhesion were sputtered on bare float glass substrates at a substrate temperature of 400 degreesC or above. X-ray diffraction revealed that the as-sputtered films are highly (1 12) oriented. The surface of the films is rough, mainly due to an incoherent top layer of CuxS precipitates. The optical absorption coefficients and bandgaps of the films were estimated by optical transmission measurements at room temperature. The as-grown films sputtered at 500 degreesC have, typically, an optical bandgap of 1.44 eV. The electrical properties, such as the carrier concentration, Hall mobility and resistivity, in dependence on temperature (from 77 to 350 K) were characterized by Hall effect measurements. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:231 / 236
页数:6
相关论文
共 22 条
[1]   Structural and optical characterization of RF reactively sputtered CuInS2 thin films [J].
He, YB ;
Polity, A ;
Alves, HR ;
Österreicher, I ;
Kriegseis, W ;
Pfisterer, D ;
Meyer, BK ;
Hardt, M .
THIN SOLID FILMS, 2002, 403 :62-65
[2]   Surface and structural characterization of CuInS2 thin films deposited by one-stage RF reactive sputtering [J].
He, YB ;
Österreicher, I ;
Krämer, T ;
Polity, A ;
Kriegseis, W ;
Meyer, BK ;
Hardt, M .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29) :4380-4386
[3]   Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering [J].
He, YB ;
Polity, A ;
Österreicher, I ;
Pfisterer, D ;
Gregor, R ;
Meyer, BK ;
Hardt, M .
PHYSICA B-CONDENSED MATTER, 2001, 308 :1069-1073
[4]   Characterization of RF reactively sputtered Cu-In-S thin films [J].
He, YB ;
Polity, A ;
Gregor, R ;
Pfisterer, D ;
Österreicher, I ;
Hasselkamp, D ;
Meyer, BK .
PHYSICA B-CONDENSED MATTER, 2001, 308 :1074-1077
[5]  
He YB, 2002, JPN J APPL PHYS 2, V41, pL484, DOI [10.1143/JJAP.41.L484, 10.1143/JJAP.4I.L484]
[6]  
HE YB, 2002, IN PRESS I PHYS C SO
[7]   ELECTROPLATED CUINS2 AND CUINSE2 LAYERS - PREPARATION AND PHYSICAL AND PHOTOVOLTAIC CHARACTERIZATION [J].
HODES, G ;
ENGELHARD, T ;
CAHEN, D ;
KAZMERSKI, LL ;
HERRINGTON, CR .
THIN SOLID FILMS, 1985, 128 (1-2) :93-106
[8]   GROWTH AND PROCESS IDENTIFICATION OF CUINS2 ON GAP BY CHEMICAL VAPOR-DEPOSITION [J].
HWANG, HL ;
SUN, CY ;
FANG, CS ;
CHANG, SD ;
CHENG, CH ;
YANG, MH ;
LIN, HH ;
TUWANMU, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :116-124
[9]   GROWTH AND PROPERTIES OF SPUTTER-DEPOSITED CUINS2 THIN-FILMS [J].
HWANG, HL ;
CHENG, CL ;
LIU, LM ;
LIU, YC ;
SUN, CY .
THIN SOLID FILMS, 1980, 67 (01) :83-93
[10]   CULNS2 THIN-FILM HOMOJUNCTION SOLAR-CELLS [J].
KAZMERSKI, LL ;
SANBORN, GA .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3178-3180