Monolithic coupling of a SU8 waveguide to a silicon photodiode

被引：27

作者：

Nathan, M ^{[1
]}

Levy, O

Goldfarb, I

Ruzin, A

机构：

[1] Tel Aviv Univ, Dept Elect Engn Phys Elect, IL-69978 Tel Aviv, Israel

[2] Tel Aviv Univ, Dept Solid Mech Mat & Syst, IL-69978 Tel Aviv, Israel

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 12期

关键词：

D O I：

10.1063/1.1625778

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present quantitative results of light coupling from SU8 waveguides into silicon p-n photodiodes in monolithically integrated structures. Multimode, 12 mum thick, and 20 mum wide SU8 waveguides were fabricated to overlap 40x180 mum(2) photodiodes, with three different waveguide-photodiode overlap lengths. The attenuation due to leaky-mode coupling in the overlap area was then calculated from photocurrent measurements. The overlap attenuation ranged from a minimum of 2.2 dB per mm overlap length to a maximum of about 3 dB/mm, comparing favorably with reported nonpolymeric waveguide-Si photodiode attenuations. (C) 2003 American Institute of Physics.

引用

页码：7932 / 7934

页数：3

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