LATERAL COUPLING BETWEEN A SILICON-OXINITRIDE WAVE-GUIDE AND AN AMORPHOUS SI PHOTODIODE

被引:8
作者
KAPSER, K
DEIMEL, PP
机构
[1] Messerschmitt-Bölkow-Blohm GmbH, 8000 München 80
关键词
D O I
10.1063/1.350918
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the absorption coefficient at lambda = 850 nm for an amorphous Si (a-Si:H) p-i-n photodiode laterally coupled to a silicon-oxinitride single mode planar waveguide both for TE and TM modes. The experimental results are compared to calculations considering a five-layer system with a complex index of refraction for the absorbing layer. Theoretical and experimental results agree well considering the inaccuracies in the determination of the layer thicknesses.
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页码:3614 / 3616
页数:3
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