High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

被引：5

作者：

Mahajan, A

Fay, P

Caneau, C

Adesida, I

机构：

[1] UNIV ILLINOIS, DEPT ELECT & COMP ENGN, URBANA, IL 61801 USA

[2] BELL COMMUN RES INC, RED BANK, NJ 07701 USA

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 11期

关键词：

high electron mobility transistors; carrier mobility;

D O I：

10.1049/el:19960652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of 1.0 mu m gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched LnAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an f(t) of 35GHz and an f(max) of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

引用

页码：1037 / 1038

页数：2

共 6 条

[1] 1.09-EV SCHOTTKY-BARRIER HEIGHT OF NEARLY IDEAL PT/AU CONTACTS DIRECTLY DEPOSITED ON N-AL0.48IN0.52AS AND P+N-AL0.48IN0.52AS LAYERS [J].