INALAS/INGAAS/INP MODFETS WITH UNIFORM THRESHOLD VOLTAGE OBTAINED BY SELECTIVE WET GATE RECESS

被引：38

作者：

TONG, M

NUMMILA, K

KETTERSON, A

ADESIDA, I

CANEAU, C

BHAT, R

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

[3] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/55.192822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excellent uniformity in the threshold voltage, transconductance, and current-gain cutoff frequency of InAlAs/InGaAs/InP MODFET's has been achieved using a selective wet gate recess process. An etch rate ratio of 25 was achieved for InGaAs over InAlAs using a 1:1 citric acid:H2O2 solution. By using this solution for gate recessing, we have achieved a threshold voltage standard deviation of 15 mV and a transconductance standard deviation of 15 mS/mm for devices across a quarter of a 2-in-diameter wafer. The average threshold voltage, transconductance, and current-gain cutoff frequency of 1.0-mu-m gate-length devices were -234 mV, 355 mS/mm, and 32 GHz, respectively.

引用

页码：525 / 527

页数：3

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