SELECTIVELY DRY-ETCHED N+-GAAS/N-INALAS/INGAAS HEMTS FOR LSI

被引：8

作者：

KURODA, S ^{[1
]}

HARADA, N ^{[1
]}

SASA, S ^{[1
]}

MIMURA, T ^{[1
]}

ABE, M ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,SANTA BARBARA,CA 93106

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

D O I：

10.1109/55.55259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed N-InAIAs/InGaAs HEMT large-scale integrated circuits must have uniform device parameters. We have demonstrated a new selectively dry-etched n+-GaAs/N-InAIAs/InGaAs HEMT which has a very uniform threshold voltage. Despite the high dislocation density at the n+-GaAs layer, its performance is excellent. For a gate length of 0.92 µm, the maximum transconductance of the HEMT is 390 mS/mm. The measured current-gain cutoff frequency ft is 23.7 GHz, and the maximum frequency of oscillation f max is 75.0 GHz. The standard deviation of the threshold voltage across a 2-in wafer is as low as 13 mV. © 1990 IEEE

引用

页码：230 / 232

页数：3

共 12 条

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