0.23-MU-M GATE LENGTH MODFETS ON INALAS/INGAAS/INP HETEROSTRUCTURE GROWN BY MOVPE

被引：4

作者：

TONG, M

KETTERSON, A

NUMMILA, K

ADESIDA, I

AINA, L

MATTINGLY, M

机构：

[1] ALLIED SIGNAL AEROSP CO,CTR AEROSP TECHNOL,COLUMBIA,MD 21045

[2] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 16期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910894

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modulation-doped field effect transistors (MODFETs) with 0.23-mu-m gate lengths have been fabricated on an InAlAs/InGaAs/InP heterostructure grown by metal organic vapour phase epitaxy (MOVPE/MOCVD). Extrinsic DC transconductance as high as 800 mS/mm, and unity current gain cutoff frequency f(t) of over 120 GHz at room temperature have been achieved. These g(m) and f(t) values compare favourably with the best devices of similar gate length grown by molecular-beam epitaxy (MBE) and are the highest values reported for any device grown by MOVPE.

引用

页码：1426 / 1427

页数：2

共 9 条

[1]

Adesida I., 1990, Microelectronic Engineering, V11, P69, DOI 10.1016/0167-9317(90)90075-5

[2] MODULATION-DOPED ALLNAS/INP HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].