SELECTIVE REACTIVE ION ETCHING OF GAAS ON ALGAAS USING CCL2F2 AND HE

被引：46

作者：

SEABAUGH, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：77 / 81

页数：5

共 12 条

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