ELECTRICAL-PROPERTIES OF PLANAR RF DISCHARGES FOR DRY ETCHING

被引：49

作者：

VANROOSMALEN, AJ

VANDENHOEK, WGM

KALTER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336177

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：653 / 658

页数：6

共 21 条

[1] PRESSURE-DEPENDENCE OF ELECTRON-TEMPERATURE USING RF-FLOATED ELECTROSTATIC PROBES IN RF PLASMAS [J].

CANTIN, A ;

GAGNE, RRJ .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :316-319

[2]

Chapman B., 1980, GLOW DISCHARGE PROCE

[3] MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE [J].

DEVRIES, OAM ;

VANROOSMALEN, AJ ;

PUYLAERT, GCC .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (09) :4386-4390

[4]

DONNELLY VM, 1982, J VAC SCI TECHNOL, V21, P768

[5]

FRANCIS G, 1960, IONIZATION PHENOMENA, P81

[6]

GALLAGHER JW, 1982, JILA22 U COL INF CTR, P99

[7]

GODYAK VA, 1972, SOV PHYS TECH PHYS-U, V16, P1073

[8] ION DYNAMICS OF RF PLASMAS AND PLASMA SHEATHS - A TIME-RESOLVED SPECTROSCOPIC STUDY [J].

GOTTSCHO, RA ;

BURTON, RH ;

FLAMM, DL ;

DONNELLY, VM ;

DAVIS, GP .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) :2707-2714

[9] RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES [J].

HORWITZ, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :60-68

[10] RADIO-FREQUENCY SPUTTERING - THE SIGNIFICANCE OF POWER INPUT [J].

HORWITZ, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1795-1800

← 1 2 3 →