MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE

被引：20

作者：

DEVRIES, OAM

VANROOSMALEN, AJ

PUYLAERT, GCC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.335458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4386 / 4390

页数：5

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