RADIO-FREQUENCY SPUTTERING - THE SIGNIFICANCE OF POWER INPUT

被引：68

作者：

HORWITZ, CM ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.572218

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1795 / 1800

页数：6

共 13 条

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[7] ROLE OF DC SELF-BIAS POTENTIAL IN CONTROL OF RF SPUTTERING
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[8] REDUCTION OF SUBSTRATE HEATING DURING RF SPUTTERING
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[9] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING
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[10] ELECTRICAL CHARACTERIZATION OF RADIO-FREQUENCY SPUTTERING GAS DISCHARGE
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