Analysis of single-ion multiple-bit upset in high-density DRAMs

被引：33

作者：

Makihara, A ^{[1
]}

Shindou, H

Nemoto, N

Kuboyama, S

Matsuda, S

Oshima, T

Hirao, T

Itoh, H

Buchner, S

Campbell, AB

机构：

[1] Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan

[2] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan

[3] SFA Inc, Largo, MD 20774 USA

[4] USN, Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New types of multiple-bit upset (MBU) modes have been identified in high-density DRAMs (16 Mbit and 64 Mbit). The identification of the mechanisms responsible for the new modes is based on detailed physical bit-map analysis.

引用

页码：2400 / 2404

页数：5

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