Bulk grain resistivity of ZnO-based varistors

被引：7

作者：

Caballero, AC

Hevia, DF

De Frutos, J

Peiteado, M

Fernández, JF

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, E-28040 Madrid, Spain

[2] CSIC, Inst Ceram & Vidrio, Dpto Electroceram, E-28049 Madrid, Spain

来源：

JOURNAL OF ELECTROCERAMICS | 2004年 / 13卷 / 1-3期

关键词：

varistors; electrical properties; bulk conductivity;

D O I：

10.1007/s10832-004-5188-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We study the temperature dependence of grain resistivity in ZnO ceramic varistors (300-430 K), finding a positive temperature coefficient (PTC). We devise a high-frequency procedure that allow us to obtain the concentration and energy position of the shallow donor. The observed behavior is consistent with a shallow donor approaching complete ionization, and with an electron mobility mainly controlled by lattice (both optical and acoustical) scattering. The impact of this behavior on varistor performance under high-current pulse loads is discussed.

引用

页码：759 / 763

页数：5

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