Preparation of wurtzite GaN-based magnetic alloy semiconductors by molecular beam epitaxy

被引:26
作者
Kuwabara, S [1 ]
Ishii, K [1 ]
Haneda, S [1 ]
Kondo, T [1 ]
Munekata, H [1 ]
机构
[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
PHYSICA E | 2001年 / 10卷 / 1-3期
关键词
III-V compound semiconductors; diluted magnetic semiconductors; GaN; molecular beam epitaxy;
D O I
10.1016/S1386-9477(01)00089-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper describes the preparation of hexagonal GaN:Mn and GaN:Fe epilayers by molecular beam epitaxy with very high concentrations of transition metal ions which are sufficient to exhibit magnetic orders. We have found that the growth window to obtain epilayers without a macroscopic second phase is relatively large for the GaN:Mn compared with the GaN:Fe. Magnetization data have showed that GaN:Mn epilayers are primarily paramagnetic with the ferromagnetic spin exchange represented by the paramagnetic Curie temperature theta (p) = 20 K. The effective spin number would be S approximate to 2.5. The GaN:Fe epilayers exhibit superparamagnetic behavior which presumably arises from Fe and/or FeN crystallites. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:233 / 236
页数:4
相关论文
共 6 条
  • [1] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    Cibert, J
    Ferrand, D
    [J]. SCIENCE, 2000, 287 (5455) : 1019 - 1022
  • [2] (GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy
    Hayashi, T
    Tanaka, M
    Nishinaga, T
    Shimada, H
    Tsuchiya, H
    Otuka, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1063 - 1068
  • [3] KUWABARA S, UNPUB
  • [4] DILUTED MAGNETIC III-V SEMICONDUCTORS
    MUNEKATA, H
    OHNO, H
    VONMOLNAR, S
    SEGMULLER, A
    CHANG, LL
    ESAKI, L
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1849 - 1852
  • [5] MOVPE of GaN using a specially designed two-flow horizontal reactor
    Nishida, K
    Haneda, S
    Hara, K
    Munekata, H
    Kikimoto, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 312 - 315
  • [6] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
    Ohno, H
    Shen, A
    Matsukura, F
    Oiwa, A
    Endo, A
    Katsumoto, S
    Iye, Y
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (03) : 363 - 365