Preparation of SiBi2Ta2O9 thin films with a single alkoxide sol-gel precursor

被引:24
作者
Kim, Y
Chae, HK [1 ]
Lee, KS
Lee, WI
机构
[1] Inha Univ, Dept Chem, Inchon 402751, South Korea
[2] Inha Univ, Ctr Chem Dynam, Inchon 402751, South Korea
[3] Hankuk Univ Foreign Studies, Dept Chem, Yongin 449791, South Korea
关键词
D O I
10.1039/a806275g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
For the first:time, a single alkoxide sol-gel:precursor solution for the ferroelectric strontium bismuth tantalate (SrBi2Ta2O9, SET) was synthesized and utilized for the fabrication of its thin films. The precursor was prepared from a 2-methoxyethanol solution of Sr(OCH2CH2OCH3)(2), Bi(OCH2CH2OCH3)(3), and Ta(OCH2CH2OCH3)(5). H-1 and C-13 NMR spectra of the precursor in benzene show only one set of alkoxy groups, indicating the same chemical environment in solution. This observation suggests that it is a single sol-gel precursor, which is-ideal for the sol-gel processing of SET thin films. The SET films derived from this precursor present outstanding ferroelectric properties and surface morphology.
引用
收藏
页码:2317 / 2319
页数:3
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