The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode

被引：13

作者：

Wang, T ^{[1
]}

Sugahara, T ^{[1
]}

Sakai, S ^{[1
]}

Orton, J ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Electr Engn, Satellite Venture Business Lab, Yamashiro, Tokushima 770, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of photoluminescence measurement was performed on an undoped In0.126Ga0.874N/GaN multiple quantum well (MQW) structure and a light emitting diode (LED) structure using this MQW as an active region. The emission energy of the LED structure showed a red shift of about 230 meV at room temperature compared with the undoped In0.126Ga0.874N/GaN MQW. This behavior of the LED structure is attributed to the quantum-confined Stark effect due to its p-n junction induced electric field. This conclusion was confirmed by a calculation and a detailed discussion based on the theory of the quantum-confined Stark effect. (C) 1999 American Institute of Physics. [S0003-6951(99)05110-4].

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页码：1376 / 1378

页数：3

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