Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

被引：246

作者：

Usta, Hakan ^{[1
]}

Facchetti, Antonio ^{[1
]}

Marks, Tobin J. ^{[1
]}

机构：

[1] NW Univ, Dept Chem, Mat Res Ctr, Evanston, IL 60208 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 27期

关键词：

D O I：

10.1021/ja802266u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis (dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm(2)/V S in air, low turn-on voltages (-0 to +5 V), and high on/off ratios of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution.

引用

页码：8580 / +

页数：3

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