Photoluminescence of the two-dimensional hole gas in p-type delta-doped Si layers

被引：20

作者：

Buyanova, IA ^{[1
]}

Chen, WM ^{[1
]}

Henry, A ^{[1
]}

Ni, WX ^{[1
]}

Hansson, GV ^{[1
]}

Monemar, B ^{[1
]}

机构：

[1] LINKOPING UNIV, DEPT PHYS & MEASUREMENT TECHNOL, S-58183 LINKOPING, SWEDEN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.53.9587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The radiative recombination processes related to the boron-delta-doping of Si layers are studied by means of photoluminescence (PL) spectroscopy. New broad asymmetric PL bands below the band edge excitonic emissions are shown to be characteristic for p-type modulation doping. By studying the dependence of the PL properties on structure parameters, such as doping level and growth temperature, and on the experimental conditions the mechanisms of the radiative recombination are analyzed. The PL revealed is argued to be related to the recombination between the two-dimensional hole gas confined in the doping-induced notch potential and photocreated electrons.

引用

页码：9587 / 9590

页数：4

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