DOPANT ELECTRICAL-ACTIVITY AND MAJORITY-CARRIER MOBILITY IN B-DELTA-DOPED AND SB-DELTA-DOPED SI THIN-FILMS

The electrical characteristics of Si films grown by low-temperature molecular-beam epitaxy and doped with Sb or B in single or multiple delta-like doping profiles have been investigated. Two-dimensional concentrations ranging from almost-equal-to 10(13) cm-2 to 5 X 10(14) cm-2 have been realized. For single doping spikes Hall measurements indicate an apparent reduction in electrical activity to about 50%. This is linked to the confinement of the carriers in the potential well of the doping spike. The reduced electrical activity is not due to growth imperfections. The effect of the confinement on the Hall measurements can be reduced in delta-doping superlattices, provided the distance between doping spikes is sufficiently small. For N(Sb)2D = 10(13) cm-1 the mobility in a delta-doping superlattice drops exponentially as a function of inverse spike spacing until, at about 5 nm, a value close to the mobility in an equivalent, uniformly doped film (N(Sb) almost-equal-to 3 X 10(19) cm-3) is reached. Carrier mobilities in delta-doped layers far exceed those of uniformly doped layers of equivalent concentration. Electron mobilities reach 400 cm2/V s for a sheet concentration of 1 X 10(13) cm-2 and are still at almost-equal-to 40 cm2/V s at N(Sb)2D = 5 X 10(14) cm-2. For p-type doping these numbers are 180 and 20 cm/V s, respectively.