SI(100)-(2X1)BORON RECONSTRUCTION - SELF-LIMITING MONOLAYER DOPING

被引：54

作者：

HEADRICK, RL

WEIR, BE

LEVI, AFJ

EAGLESHAM, DJ

FELDMAN, LC

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A (2 X 1) surface reconstruction distinct from the clean Si(100)-(2 X 1) surface is formed by depositing boron onto silicon in ultrahigh vacuum. Overgrowth of epitaxial silicon at low temperature preserves a (2 X 1) superstructure of substitutional boron. Hall-effect measurements at 4.2 K show complete electrical activity for boron coverages of 1/2 monolayer, but additional boron above 1/2 monolayer is not electrically active.

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页码：2779 / 2781

页数：3

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