INFLUENCE OF SURFACE RECONSTRUCTION ON THE ORIENTATION OF HOMOEPITAXIAL SILICON FILMS

Single-crystal silicon films grown at 400°C on Si(111):B(3 × 3) are rotated 180°about the surface normal with respect to the substrate. We discuss a mechanism based on chemical effects due to the boron (3 × 3) reconstruction that favors the film to grow with a B-type (twin) orientation. Films grown on the Si(111)-(7×7) reconstruction under identical conditions have the A-type (untwinned) orientation. © 1990 The American Physical Society.