STRUCTURAL-PROPERTIES OF ULTRATHIN ARSENIC-DOPED LAYERS IN SILICON

[1] Altshuler B. L., 1985, Electron-electron interactions in disordered systems, P1

[2] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1579 - 1582

[3] BEAM JC, 1982, J VAC SCI TECHNOL, V20, P137

[4] INSITU DOPING BY AS ION-IMPLANTATION OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 3938 - 3944

[5] DENHOFF MW, UNPUB

[6] METAL-INSULATOR-TRANSITION IN GRANULAR ALUMINUM [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (02) : 137 - 140

[7] KASPER E, 1988, SILICON MOL BEAM EPI, V2

[8] KASPER E, 1988, SILICON MOL BEAM EPI, V1

[9] METAL-INSULATOR-TRANSITION IN SI-AS [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 638 - 640

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[1] Altshuler B. L., 1985, Electron-electron interactions in disordered systems, P1

[2] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1579 - 1582

[3] BEAM JC, 1982, J VAC SCI TECHNOL, V20, P137

[4] INSITU DOPING BY AS ION-IMPLANTATION OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 3938 - 3944

[5] DENHOFF MW, UNPUB

[6] METAL-INSULATOR-TRANSITION IN GRANULAR ALUMINUM [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (02) : 137 - 140

[7] KASPER E, 1988, SILICON MOL BEAM EPI, V2

[8] KASPER E, 1988, SILICON MOL BEAM EPI, V1

[9] METAL-INSULATOR-TRANSITION IN SI-AS [J]. PHYSICAL REVIEW B, 1983, 28 (02): : 638 - 640

[10] OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3