Scattering states of ionized dopants probed by low temperature scanning tunneling spectroscopy

被引：71

作者：

Wittneven, C ^{[1
]}

Dombrowski, R ^{[1
]}

Morgenstern, M ^{[1
]}

Wiesendanger, R ^{[1
]}

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.81.5616

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

N type InAs(110) is investigated by scanning tunneling spectroscopy at low temperature. dI/dV images at positive sample bias exhibit circular corrugations, which are caused by the scattering of electron waves at the attractive potential of ionized dopants. Normalizing the images by simultaneously recorded constant current images gives quasidirect access to the surface distribution of the corresponding energy selected scattering states. The normalized images are in quantitative agreement with a WKB model. The energy dependence of the scattering cross section can be estimated from the model.

引用

页码：5616 / 5619

页数：4

共 31 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] STM STUDIES OF THE INTERACTION OF SURFACE-STATE ELECTRONS ON METALS WITH STEPS AND ADSORBATES [J].

AVOURIS, P ;

LYO, IW ;

MOLINASMATA, P .

CHEMICAL PHYSICS LETTERS, 1995, 240 (5-6) :423-428

[3] OBSERVATION OF QUANTUM-SIZE EFFECTS AT ROOM-TEMPERATURE ON METAL-SURFACES WITH STM [J].

AVOURIS, P ;

LYO, IW .

SCIENCE, 1994, 264 (5161) :942-945

[4] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW [J].

BARDEEN, J .

PHYSICAL REVIEW LETTERS, 1961, 6 (02) :57-&

[5]

CROMMIE MF, 1903, NATURE, V363, P524

[6] Scanning tunneling spectroscopy on n-InAs(110): Landau-level quantization and scattering of electron waves at dopant atoms [J].

Dombrowski, R ;

Wittneven, C ;

Morgenstern, M ;

Wiesendanger, R .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S203-S206

[7]

DOMBROWSKI R, 1998, THESIS HAMBURG

[8]

DOMBROWSKI R, IN PRESS PHYS REV B

[9] Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces [J].

Ebert, P ;

Heinrich, M ;

Simon, M ;

Domke, C ;

Urban, K ;

Shih, CK ;

Webb, MB ;

Lagally, MG .

PHYSICAL REVIEW B, 1996, 53 (08) :4580-4590

[10] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929

← 1 2 3 4 →